1/4 rev. a structure : silicon monolithic integrated circuit product : sound processor for car audio type: BD37542FS package: ssop-a32 feature 1. reduce switching noise of input gain control, mute, ma in volume, fader volume, bass, middle, treble, loudness, by using advanced switch circuit [possible to control all steps] 2. built-in ground isolation amplifier inputs, ideal for external stereo input. 3. built-in differential input selector that can make various combination of single-ended / differential input. 4. built-in input gain controller reduce switch ing noise for volume of a portable audio input. 5. decrease the number of external co mponents by built-in 3-band equalizer filter, lpf for subwoofer. and, possible to control q, gv, fo of 3-band equalizer and fc of lpf by i 2 c bus control freely. 6. it is possible for the bass, middle, treble to the gain adjustment quantity of 20db and 1 db step gain adjustment. 7. it is equipped with output terminals of subwoofer. mor eover, the stereo signal of t he front and rear also can be output by the i 2 c bus control. 8. built-in mixing input and mixing attenuation . 9. bi-cmos process is suitable for the design of low current and low energy. and it provides more quality for small-scale regulator and heat in a set. 10. package is ssop-a32. puttin g i nput-terminals together and out put-terminals together can make pcb layout easier and can makes area of pcb smaller. 11. it is possible to control by 3.3v / 5v for i 2 c bus. absolute maximum ratings (ta=25 ) paramete r symbol limits unit power supply voltage vcc 10.0 v input voltage vin vcc+0.3 gnd-0.3 v power dissipation pd 950 1m w storage temperature tastg -55 +150 1 at ta 25c or higher, this value is decreaced to 8.5mw/c when rohm standard board is mounted. rohm standard board: size 70 70 1.6(mm 3 ) material fr4 glass-epoxy substrate (copper foil area: not more than 3%). operating range parameter symbol min. typ. max. unit power supply voltage vcc 7.0 9.5 v temperature topr -40 +85 design against radiation-proof isn?t made.
2/4 rev. a function function specifications input selector stereo 3 single-end input and 2differential input possible to switch single-end input input gain 0 20db (1db step), possible to use ?advanced switch? for prevention of switching noise. mute possible to use ?advanced switch? for prevention of switching noise. volume +15db - 79db (1db step), -db possible to use ?advanced switch? for prevention of switching noise. bass -20 +20db (1db step), q=0.5, 1, 1.5, 2, fo=60, 80, 100, 120hz possible to use advanced switch at changing gain middle -20 +20db (1db step), q=0.75, 1, 1.25, 1.5, fo=500, 1k, 1.5k, 2.5khz possible to use advanced switch at changing gain treble -20 +20db (1db step), q=0.75, 1.25, fo=7.5k, 10k, 12.5k, 15khz possible to use advanced switch at changing gain fader +15db - 79db (1db step), -db possible to use ?advanced switch? for prevention of switching noise. loudness 0db 20db (1db step) possible to use ?advanced switch? for prevention of switching noise. lpf fc=55/85/120/160hz, pass phase shift ( 0/180) mixing monaural input +7db - 79db (1db step), - db possible to use ?advanced switch? for prevention of switching noise. electrical characteristic (unless specified particularly, ta=25 , vcc=8.5v, f=1khz, vin=1vrms, rg=600 , r l =10k , a input, input gain 0db, mute off, volume 0db, tone control 0db, loudness 0db, fader 0db, lpf off, mixing off) item symbol limit unit condition min. typ. max. current upon no signal iq 38 48 ma no signal voltage gain gv -1.5 0 1.5 db gv=20log(vout/vin) channel balance cb -1.5 0 1.5 db cb = gv1-gv2 total harmonic distortion 1 (front,rear) thd+n1 0.001 0.05 vout=1vrms bw=400-30khz total harmonic distortion 2 (subwoofer) thd+n2 0.002 0.05 vout=1vrms bw=400-30khz output noise voltage 1 (front,rear) vno1 3.8 15 vrms rg = 0 bw = ihf-a output noise voltage 2 (subwoofer) vno2 4.8 15 vrms rg = 0 bw = ihf-a residual output noise voltage vnor 1.8 10 vrms fader= - db rg=0 bw=ihf-a cross-talk between channels ctc -100 -90 db rg=0 ctc=20log(vout/vin) bw=ihf-a ripple rejection rr -70 -40 db f=100hz vrr=100mvrms rr=20lo g( vout/vccin ) common mode rejection ratio (d, e) cmrr 50 65 db xp1 and xn input xp2 and xn input cmrr=20log(vin/vout) bw = ihf-a,[ x ???d,e] maximum input voltage vim 2.0 2.2 vrms vim at thd+n(vout)=1% bw=400-30khz maximum gain gv max 13 15 17 db volume = 15db vin=100mvrms gv=20lo g( vout/vin ) maximum attenuation gv min -100 -85 db volume= - db gf=20log(vout/vin) bw=ihf-a maximum output voltage vom 2.0 2.2 vrms thd+n=1% bw=400-30khz
3/4 rev. a dimensional outline drawing block diagram descriptions of terminal terminal no. terminal name 1 a1 2 a2 3 b1 4 b2 5 c1 6 c2 7 dp1 8 dn 9 dp2 10 ep1 11 en1 12 en2 13 ep2 14 min 15 lda1 16 ldb1 17 ldb2 18 lda2 19 mute 20 n.c. 21 test 22 outs2 23 outs1 24 outr2 25 outr1 26 outf2 27 outf1 28 vcc 29 scl 30 sda 31 gnd 32 fil ssop-a32 (unit mm) BD37542FS lot no. max13.95(include. burr)
4/4 rev. a cautions on use (1) absolute maximum ratings if applied voltage, operating temperatur e range, or other absolute maximum ratings are exceeded, the lsi may be damaged. do not apply voltages or te mperatures that exceed the absolute maximum ratings. if you think of a case in which absolute maximum ratings are exceeded, enforce fuses or other physical safety measures and investigate how not to apply the conditions under whic h absolute maximum ratings are exceeded to the lsi. (2) gnd potential make the gnd pin voltage such that it is the lowest voltage even when oper ating below it. actually confirm that the voltage of each pin does not become a lower voltage than the gnd pin, including transient phenomena. (3) thermal design perform thermal design in which there are adequate ma rgins by taking into account the allowable power dissipation in actual states of use. (4) shorts between pins and misinstallation when mounting the lsi on a board, pa y adequate attention to orientation and placement discrepancies of the lsi. if it is misinstalled and the power is turned on, t he lsi may be damaged. it also may be damaged if it is shorted by a foreign substance coming between pins of the lsi or between a pin and a power supply or a pin and a gnd. (5) operation in strong magnetic fields adequately evaluate use in a strong magnetic field, since there is a possibility of malfunction.
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